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Other articles related with "aluminum nitride"：
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126202 |
Shi-Tai Guo(郭世泰), Zhen-Zhen Xu(徐真真), Yan-Lei Geng(耿延雷), Qi Rui(芮琦), Dian-Chen Du(杜殿臣), Jian-Fu Li(李建福), and Xiao-Li Wang(王晓丽) |
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Chair-like N66- in AlN3 with high-energy density |
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Chin. Phys. B
2023 Vol.32 (12): 126202-126202
[Abstract]
(239)
[HTML 1 KB]
[PDF 1815 KB]
(208)
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87302 |
Qi Liang(梁琦), Meng-Qi Yang(杨孟骐), Chang-Hao Wang(王长昊), and Ru-Zhi Wang(王如志) |
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A simple method to synthesize worm-like AlN nanowires and its field emission studies |
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Chin. Phys. B
2021 Vol.30 (8): 87302-087302
[Abstract]
(358)
[HTML 1 KB]
[PDF 1930 KB]
(40)
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67305 |
Chun-Xu Su(苏春旭), Wei Wen(温暐), Wu-Xiong Fei(费武雄), Wei Mao(毛维), Jia-Jie Chen(陈佳杰), Wei-Hang Zhang(张苇杭), Sheng-Lei Zhao(赵胜雷), Jin-Cheng Zhang(张进成), and Yue Hao(郝跃) |
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Design and simulation of AlN-based vertical Schottky barrier diodes |
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Chin. Phys. B
2021 Vol.30 (6): 67305-067305
[Abstract]
(512)
[HTML 0 KB]
[PDF 879 KB]
(107)
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76802 |
Jing-Jing Chen(陈晶晶), Jun Huang(黄俊), Xu-Jun Su(苏旭军), Mu-Tong Niu(牛牧童), Ke Xu(徐科) |
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Influence comparison of N2 and NH3 nitrogen sources on AlN films grown by halide vapor phase epitaxy |
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Chin. Phys. B
2020 Vol.29 (7): 76802-076802
[Abstract]
(506)
[HTML 0 KB]
[PDF 2747 KB]
(97)
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108101 |
Zi-Yi Ding(丁子祎) |
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Effect of AlN coating on hydrogen permeability and surface structure of VT6 alloy by vacuum arc ion plating |
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Chin. Phys. B
2019 Vol.28 (10): 108101-108101
[Abstract]
(614)
[HTML 1 KB]
[PDF 644 KB]
(141)
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27701 |
Qiu Hua-Cheng (邱华诚), Dara Feili, Wu Xue-Zhong (吴学忠), Helmut Seidel |
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Resonance-mode effect on piezoelectric microcantilever performance in air, with a focus on the torsional modes |
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Chin. Phys. B
2014 Vol.23 (2): 27701-027701
[Abstract]
(614)
[HTML 1 KB]
[PDF 673 KB]
(704)
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67305 |
Feng Qian(冯倩), Li Qian(李倩), Xing Tao(邢韬) Wang Qiang(王强), Zhang Jin-Cheng(张进成), and Hao Yue(郝跃) |
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Performance of La2O3/InAlN/GaN metal–oxide–semiconductor high electron mobility transistors |
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Chin. Phys. B
2012 Vol.21 (6): 67305-067305
[Abstract]
(1206)
[HTML 1 KB]
[PDF 549 KB]
(2061)
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127303 |
Liu Hong-Xia(刘红侠), Li Bin(李斌), Li Jin(李劲), Yuan Bo(袁博), and Hao Yue(郝跃) |
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Electrical characteristics of SiGe-on-insulator nMOSFET and SiGe-silicon-on-aluminum nitride nMOSFET |
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Chin. Phys. B
2010 Vol.19 (12): 127303-127303
[Abstract]
(1547)
[HTML 1 KB]
[PDF 973 KB]
(846)
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116801 |
Ren Fan(任凡), Hao Zhi-Biao(郝智彪), Hu Jian-Nan(胡健楠), Zhang Chen(张辰), and Luo Yi(罗毅) |
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Effects of AlN nucleation layer thickness on crystal quality of AlN grown by plasma-assisted molecular beam epitaxy |
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Chin. Phys. B
2010 Vol.19 (11): 116801-117101
[Abstract]
(1347)
[HTML 1 KB]
[PDF 2257 KB]
(2134)
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